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Our Courses

CMP Fundamentals

16 hours
Taught by Prof. Ara Philipossian

SiC Technology

4 hours
Taught by Profs. Keleher and Philipossian

Wafer-Level and Nanoparticle-level Surface Chemistry

4 hours
Taught by Prof. Keleher

Advanced Slurry Additives and Formulations and Their Effects on Pad and Disc Longevity

4 hours
Taught by Prof. Keleher

Course Details

Flexible Delivery All courses can be delivered in person or virtually over several weeks, depending on customer needs.
Unlimited Attendees There is no limit on the number of attendees per course. You're welcome to videotape the courses for future playback to your employees.
Professional Certificates Formal certificates of professional achievement will be presented to all participants who complete each course.
Custom Courses We remain open to developing new and customer-centric courses.

CMP Fundamentals

16 hours
01 Historical overview – Why and how CMP came about, and a look into the future
02 Definitions of terms
03 Review of selected experimental evidence of introducing and discussing observations that form the basis for a conceptual understanding of CMP phenomena and removal rate models
04 Bulk polishing theory of applying a proper model for oxide and metal removal
05 Fundamentals of Pads
06 Tribology of CMP and nanoparticle settling in slurries
07 Advanced topics in CMP
08 Reactor design and modeling
09 Fundamentals of gritted diamond and CVD-coated discs for pad conditioning
10 Fundamentals of retaining rings
11 Fundamentals of post-CMP cleaning

SiC Technology

4 hours
01 Wide bandgap materials
02 Why silicon carbide?
03 Silicon vs. silicon carbide crystal growth methods
04 The Si-face and C-face of SiC wafers
05 Crystal growth failure modes and types of defects
06 Defect transference into Epi Layers
07 The primary unit operations in SiC wafer manufacturing
08 CMP causes surface and subsurface damage
09 Benefits and challenges in going from 150-mm to 200-mm SiC wafers
10 Case Study No. 1 – Effect of conditioner type on bulk SiC polish performance
11 Case Study No. 2 – A new method for final epi-ready SiC polish
12 Silicon carbide epitaxy
13 SiC CMP challenges and material durability – Understand how slurry chemistry affects pad and disc performance
14 Fundamentals of SiC Removal (role of step edges and defects, and surface termination effects)
15 Oxidizers in CMP (KMnO₄, H₂O₂, and ozone – Mechanisms and comparisons, Redox-driven surface modification)
16 Abrasive-Oxidizer Synergy (enhancing removal rate and surface quality, DOE and surface energy insights)
17 Pad Interaction and Degradation (chemical-mechanical breakdown mechanisms, effects of pH, temperature, and oxidizer concentration)
18 Mitigation Strategies (pad coatings, chelators, and formulation controls)
19 Emerging Additives (organometallic complexes, reactive oxidizing species tuning, and particle clustering effects)
20 Flucto-CMP® Integration (sono-chemical enhancement of redox chemistry, pot life, and inline mixing optimization)
21 Summary and Outlook (key formulation principles, application-specific design strategies)

Wafer-Level and Nanoparticle-level Surface Chemistry

4 hours
01 Pad and Contact Mechanics (particle entrapment, defect sites, pad conditioning, and the modification of surface response)
02 Slurry and Substrate Complexity (Cu, STI, WBG – oxidation states, ligand chemistry, different chemistries require tailored cleaning)
03 Defect Formation Mechanisms (organic residues, galvanic corrosion, hydrophobic debris, 3-body interactions drive complex defect modes)
04 Cleaning Approaches (brush scrubbing vs. megasonic, supramolecular, and SC-1 mimic chemistries)
05 Emerging Concepts (residue as activator, surface energy tuning to boost removal)
06 Flucto-Clean® Case Study (enhanced PRE, lower shear force, dynamic vs. static cleaning synergy)
07 Takeaways (match surface chemistry to cleaning design, minimize stress, maximize selectivity, cleaning is not passive, it’s chemically active)
08 Asperity Dynamics (asperity reduction means increased pad wear, diamond shape, and orientation, and their impact on asperity interactions)
09 Debris Generation, Pad Damage (catching vs. tearing, pore structure, micro-delamination and rupture zones, diamond edge and sidewall whittling effects)
10 Thermal and Mechanical Effects (friction-induced heating and material loss, thermomechanical deformation, viscoelastic rebound)
11 Conditioning Consequences (pad thinning and slurry transport, and non-uniform conditioning)

Advanced Slurry Additives and Formulations and Their Effects on Pad and Disc Longevity

4 hours
01 Introduction and Scope – CMP as an enabling process (FEOL, BEOL, and advanced packaging).
02 Slurry Components and Functions – Abrasives, oxidizers, inhibitors, surfactants.
03 Abrasive Chemistry – Silica, ceria, alumina, zirconia, diamond.
04 Surface Functionalization Strategies (e.g., silane and photo-activation).
05 Additive-Pad Interactions – Complexing agents, pH effects, adhesion, tribology.
06 Oxidative and thermal degradation mechanisms – Case Study – Copper CMP
07 Slurry formulation, additive impact, electrochemical behavior.
08 Pad and disc longevity impacts – Conditioner wear, fouling, and surface energy effects.
09 Barrier Slurry Design – Selectivity, dual-inhibitor systems, low-stress processing.
10 Future topics – W CMP, STI, pad-conditioner synergies, advanced nanoparticles.
11 Cu CMP Chemistry and Slurry Filtration (oxidation states, complexation, Fenton-like reactivity, nanoparticle stability, glycine adsorption, and corrosion current tracking)
12 Case Studies in CMP (W CMP – wear dynamics, conditioner fouling, STI – CeO₂ abrasives, redox reactivity, and pad damage)
13 Emerging Additive Strategies – Functionalized particles, biomimetic additives, filtration, and redox modulation effects
14 The Flucto-CMP® Innovation (sono-activated polishing chemistry, megasonic frequency, power, and slurry flow rate tuning, redox control, ROS generation, and removal rate gains)
15 Mechanistic and Surface Characterization (ORP and DO monitoring, contact angle, interferometry, film thickness, and surface roughness)
16 Future Directions (redox-smart nanocomposites, low-wear and high-efficiency CMP formulations)

Instructors

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Prof. Ara Philipossian
Co-Founder, President & CEO, Araca Inc.

Since 2004, Dr. Philipossian has been the Co-Founder, President, and CEO of Araca, Inc., the premier provider of services and equipment to the polishing and planarization industry worldwide. From 2001 to 2022, he was a professor of Chemical Engineering at the University of Arizona, where he held the Koshiyama Chair of Planarization.

He received his BS, MS, and PhD in Chemical Engineering from Tufts University in 1983, 1985, and 1992, respectively. From 1992 to 2001, he was the Materials Technology Manager at Intel (Santa Clara, CA, USA), responsible for the development, characterization, implementation, and sustaining of new and existing CMP and post-CMP cleaning consumables, low-k dielectrics, and electroplating chemicals. From 1986 to 1992, he worked at Digital Equipment Corporation (Hudson, MA, USA) as a process development manager focusing on thermal silicon oxidation, diffusion, LPCVD of dielectric and gate electrodes, and wet cleaning technology. Prof. Philipossian has authored approximately 180 archival journal publications and about 210 articles in conference proceedings. He holds 36 patents in the area of semiconductor processing and device fabrication.

JK
Prof. Jason Keleher
Professor & Chair, Chemistry Department, Lewis University

Prof. Keleher is a leading researcher in surface and interface science, focusing on CMP, the development of advanced materials, and sustainable semiconductor processing. Jason received his Ph.D. (Organic Chemistry) from Clarkson University (New York) in 2004 under the guidance of the late Prof. Yuzhuo Li, working on the development of next-generation consumable technologies for CMP of Cu/Low-K devices. Jason was a Postdoctoral Research Scientist at Komag Inc. (now Western Digital), and a Senior Research Scientist at CMC (now Entegris). He is currently the Professor and Chair of the Chemistry Department at Lewis University, where he leads an active research group that combines fundamental molecular mechanisms with applied engineering challenges to drive the design of advanced slurries and cleaning chemistries for CMP and post-CMP processes.

Prof. Keleher has authored 50 archival journal publications and has given 500 technical presentations at various conferences. He holds 25 patents in the area of semiconductor processing and formulation chemistries.

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