Tel: 520.270.8086 E-mail : araca@aracainc.com

Publications

Issued Patents

  1. “Method and device for the injection of chemical mechanical planarization slurry”, United States Patent No. 9,296,088
  2. “Method and device for the injection of chemical mechanical planarization slurry”, United States Patent No. 8,845,395
  3. “Method and device for the injection of CMP slurry”, Taiwanese Patent No. I486,233
  4. “Method and device for the injection of CMP slurry”, Japanese Patent No. 5,594,597
  5. “Method and device for the injection of CMP slurry”, Korean Patent No. 1,394,745
  6. “Method and device for the injection of chemical mechanical planarization slurry”, United States Patent No. 8,197,306
  7. “Displacement measurement method in a confocal microscopy pad sample holder and method of using same”, United States Patent No. 7,869,027
  8. “Confocal microscopy pad sample holder and method of using same”, United States Patent No. 7,839,496
  9. “Removable polishing pad for chemical mechanical planarization”, United States Patent No. 7,727,052
  10. “Method of determining the number of active diamonds on a conditioning disk”, United States Patent No. 7,410,411
  11. “Method of determining the number of active diamonds on a conditioning disk”, Japan Patent No. 5,055,053

Archival Journals

  1. Method for Ultra Rapid Determination of the Lubrication Mechanism in Chemical Mechanical Planarization. R. Han, Y. Sampurno, S. Theng, F. Sudargho, Y. Zhuang & A. Philipossian. ECS Journal of Solid State Science and Technology, 6, 32 (2017).
  2. Fractional In-Situ Pad Conditioning in Chemical Mechanical Planarization. R. Han, Y. Sampurno & A. Philipossian. Tribology Letter, 65, 21 (2017).
  3. Effect of Pad Surface Micro-Texture on Removal Rate During Tungsten Chemical Mechanical Planarization. Y. Mu, R. Han, Y. Sampurno, Y. Zhuang & A. Philipossian. ECS Journal of Solid State Science and Technology, 5(6), P345-P348 (2016).
  4. Feasibility of a Real-time Method in Determining the Extent of Pad Break-in during Copper Chemical Mechanical Planarization. R. Han, Y. Sampurno & A. Philipossian. Tribology Letters,  62, 18 (2016).
  5. Mean Residence Time and Dispersion Number Associated with Slurry Injection Methods in Chemical Mechanical Planarization. Y. Mu, R. Han, Y. Sampurno, Y. Zhuang, L. Borucki & A. Philipossian. ECS Journal of Solid State Science and Technology, 5(3), P155-P159 (2016).
  6. Effect of Pad Groove Width on Slurry Mean Residence Time and Slurry Utilization Efficiency in Chemical Mechanical Planarization. Y. Mu, Y. Zhuang, Y. Sampurno, X. Wei, T. Ashizawa, H. Morishima & A. Philipossian. Microelectronic Engineering, 157, 60-63 (2016).
  7. Method for Accelerated Diamond Fracture Characterization in Chemical Mechanical Planarization. R. Han, X. Wei, Y. Zhuang, Y. Sampurno & A. Philipossian. Microelectronic Engineering, 149, 37-40 (2016).
  8. Laser Tilt Measurements of a Slurry Injection System. L. Borucki, Y. Sampurno, Y. Zhuang, C. Wu, S. Theng and A. Philipossian. ECS Journal of Solid State Science and Technology, 4(11), P1-P4 (2015).
  9. Effect of Temperature in Titanium Chemical Mechanical Planarization. Y. Mu, Y. Jiao, Y. Sampurno, Y. Zhuang, S. Theng and A. Philipossian. Japanese Journal of Applied Physics, 54(7), 076502 (2015).
  10. Effect of Pad Groove Design on Slurry Injection Scheme during Interlayer Dielectric Chemical Mechanical Planarization. C. Wu, Y. Sampurno, X. Liao, Y. Zhuang, L. Borucki, S. Theng and A. Philipossian. ECS Journal of Solid State Science and Technology, 4(7), P272-P276 (2015).
  11. Pad Surface Thermal Management during Copper Chemical Mechanical Planarization. C. Wu, Y. Sampurno, X. Liao, Y. Jiao, S. Theng, Y. Zhuang, L. Borucki and A. Philipossian. ECS Journal of Solid State Science and Technology, 4(7), P206-P212 (2015).
  12. Novel Slurry Injection System for Improved Slurry Flow and Reduced Defects in CMP, A. Philipossian, L. Borucki, Y. Sampurno and Y. Zhuang. Solid State Phenomena, Vol. 219, 143-147 (2014).
  13. Effect of Pad Surface Micro-Texture on Dishing and Erosion during STI CMP. X. Liao, Y. Zhuang, L. Borucki, J. Cheng, S. Theng, T. Ashizawa and A. Philipossian. Japanese Journal of Applied Physics, 53, 086501 (2014).
  14. Effect of Pad Micro-Texture on Removal Rate during Interlayer Dielectric Chemical Mechanical Planarization Process. X. Liao, Y. Zhuang, L. Borucki, J. Cheng, S. Theng, T. Ashizawa and A. Philipossian. Japanese Journal of Applied Physics, 52, 018001 (2013).
  15. Aggressive Diamond Wear Characterization and Analysis during Chemical Mechanical Planarization. C. Wu, Y. Zhuang, X. Liao, Y. Jiao, Y. Sampurno, S. Theng, F. Sun, A. Naman and A. Philipossian. ECS Journal of Solid State Science and Technology, 2(1), P36-P41 (2013).
  16. Pad Wear Analysis during Interlayer Dielectric Chemical Mechanical Planarization. Y. Jiao, Y. Zhuang, X. Wei, Y. Sampurno, A. Meled, S. Theng, J. Cheng, D. Hooper, M. Moinpour and A. Philipossian. Journal of Solid State Science and Technology, 1(5), N103-N105 (2012).
  17. Investigation of Eccentric PVA Brush Behaviors in Post-Cu CMP Scrubbing. T. Sun, Y. Zhuang, W. Li and A. Philipossian. Microelectronic Engineering, 100, 20-24 (2012).
  18. Effect of Retaining Ring Slot Designs and Polishing Conditions on Slurry Flow Dynamics at Bow Wave. X. Liao, Y. Sampurno, Y. Zhuang, A. Rice, F. Sudargho, A. Philipossian and C. Wargo. Microelectronic Engineering, 98, 70-73 (2012).
  19. Effect of Temperature on Pad Surface Contact Area in Chemical Mechanical Planarization. Y. Jiao, Y. Zhuang, X. Liao, L. Borucki, A. Naman and A. Philipossian. Electrochemical and Solid-State Letters, 1(2), N13-N15 (2012).
  20. Effect of Slurry Application/Injection Schemes on Slurry Availability during Chemical Mechanical Planarization (CMP). X. Liao, Y. Sampurno, Y. Zhuang and A. Philipossian. Electrochemical and Solid-State Letters, 15 (4), H118-H122 (2012).
  21. Effect of Concentric Slanted Groove Patterns on Slurry Flow during Chemical Mechanical Planarization. D. Rosales-Yeomans, H. Lee, T. Suzuki and A. Philipossian. Thin Solid Films, accepted for publication.Thin Solid Films, 520, 2224–2232 (2012).
  22. Tribological, Thermal and Kinetic Attributes of 300 vs. 450 mm Chemical Mechanical Planarization Processes. Y. Jiao, X. Liao, C. Wu, S. Theng, Y. Zhuang, Y. Sampurno, M. Goldstein and A. Philipossian. Journal of Electrochemical Society, 159(3), H255-H259 (2012).
  23. An Approach for Correlating Friction Force and Removal Rate to Pad Topography during Tungsten Chemical Mechanical Planarization. Y. Sampurno, A. Rice, Y. Zhuang and A. Philipossian. Electrochemical and Solid-State Letters, 14(8), H318-H321 (2011).
  24. Analysis of a Novel Slurry Injection System in Chemical Mechanical Planarization. A. Meled, Y. Zhuang, Y. Sampurno, S. Theng, Y. Jiao, L. Borucki and A. Philipossian. Japanese Journal of Applied Physics, 50, 05EC01 (2011).
  25. Tribological, Thermal, and Kinetic Characterization of 300-mm Copper Chemical Mechanical Planarization Process. Y. Jiao, Y. Sampurno, Y, Zhuang, X. Wei, A. Meled and A. Philipossian. Japanese Journal of Applied Physics, 50, 05EC02 (2011).
  26. Pattern Evolution in Shallow Trench Isolation Chemical Mechanical Planarization via Real-Time Shear and Down Forces Spectral Analyses. Y. Sampurno, F. Sudargho, Y. Zhuang, T. Ashizawa, H. Morishima and Ara Philipossian. Microelectronic Engineering, 88(9), 2857-2861 (2011).
  27. Effect of Pad Micro-Texture on Frictional Force and Removal Rate during Copper CMP Process. X. Liao, Y. Zhuang, L. Borucki, S. Theng, T. Ashizawa and A. Philipossian. Electrochemical and Solid-State Letters, 14(5), H201-H204 (2011).
  28. Investigation of Pad Staining and Its Effect on Removal Rate in Copper Chemical Mechanical Planarization. H. Lee, Y. Zhuang, L. Borucki, S. Joh, F. O’Moore and A. Philipossian. Thin Solid Films, 519(1), 259-264 (2010).
  29. Novel Diamond Disc Diagnostic Method Based on ‘Dry’ Coefficient of Friction Measurements. A. Meled, Y. Sampurno, F. Sudargho, Y. Zhuang and A. Philipossian. Electrochemical and Solid-State Letters, 13(12), H457-H459 (2010).
  30. Tribological, Thermal and Wear Characteristics of Polyphenylen Sulfide and Polyetheretherketone Retaining Rings in Inter-Layer Dielectric CMP. X. Wei, Y. Zhuang, Y. Sampurno, F. Sudargho, C. Wargo, L. Borucki and A. Philipossian. Electrochemical and Solid-State Letters (2010), 13(11), H391-H395.
  31. Characterization of Pad-Wafer Contact in CMP Using Confocal Microscopy. T. Sun, Y. Zhuang, L. Borucki and A. Philipossian. Japanese Journal of Applied Physics, 49(6), 066501 (2010).
  32. End-Point Detection of Ta/TaN Chemical Mechanical Planarization via Forces Analysis. Y. Sampurno, X. Gu, T. Nemoto, Y. Zhuang, A. Teramoto, A. Philipossian and T. Ohmi. Japanese Journal of Applied Physics, 49, 05FC01 (2010).
  33. Optical and Mechanical Characterization of Chemical Mechanical Planarization of Pad Surfaces. T. Sun, Y. Zhuang, L. Borucki and A. Philipossian. Japanese Journal of Applied Physics, 49(4), 046501 (2010).
  34. Investigating the Effect of Conditioner Aggressiveness on Removal Rate during Inter-Layer Dielectric CMP through Confocal Microscopy and Dual Emission UV Enhanced Fluorescence Imaging. T. Sun, L. Borucki, Y. Zhuang, Y. Sampurno, F. Sudargho, X. Wei, S. Anjur and A. Philipossian. Japanese Journal of Applied Physics, 49(2), 026501 (2010).
  35. A Three-Step Copper CMP Model Including the Dissolution Effects of a Commercial Slurry Dissolution. D. DeNardis, D. Rosales-Yeomans, L. Borucki and A. Philipossian. Thin Solid Films, 518, 3910-3916 (2010).
  36. Studying the Effect of Temperature on the Copper Oxidation Process Using Hydrogen Peroxide for Use in Multi-Step CMP Models. D. DeNardis, D. Rosales-Yeomans, L. Borucki and A. Philipossian. Thin Solid Films, 518, 3903-3909 (2010).
  37. Effect of Retaining Ring Slot Design on Slurry Film Thickness during CMP. X. Wei, Y. Sampurno, Y. Zhuang, R. Dittler, A. Meled, J. Cheng, C. Wargo, R. Stankowski and A. Philipossian. Electrochemical and Solid-State Letters, 13(4), H119-H121 (2010).
  38. Investigating the effect of diamond size and conditioning force on chemical mechanical planarization pad topography. T. Sun, L. Borucki, Y. Zhuang and A. Philipossian. Microelectronic Engineering, 87, 553-559 (2010).
  39. Analyses of Diamond Disk Substrate Wear and Diamond Microwear in Copper Chemical Mechanical Planarization Process. A. Meled, Y. Zhuang, X. Wei, J. Cheng, Y. Sampurno, L. Borucki, M. Moinpour, D. Hooper and A. Philipossian. Journal of Electrochemical Society, 157(3), H250-H255 (2010).
  40. Slurry-Induced Pad Wear Rate in Chemical Mechanical Planarization. A. Meled, Y. Sampurno, Y. Zhuang and A. Philipossian. Electrochemical and Solid-State Letters, 13 (3), H52-H54 (2010).
  41. Analysis of Formation of Pad Stains in Copper Chemical Mechanical Planarization. H. Lee, L. Borucki, Y. Zhuang, S. Joh, F. O’Moore & A. Philipossian. Japanese Journal of Applied Physics, 48(12), 126505 (2009).
  42. Theoretical and Experimental Investigation of Conditioner Design Factors on Tribology and Removal Rate in Copper CMP. L. Borucki, H. Lee, Y. Zhuang, N. Nikita, R. Kikuma & A. Philipossian. Japanese Journal of Applied Physics, 48(11), 115502 (2009).
  43. Effect of Cerium Oxide Particle Sizes in Oxide Chemical Mechanical Planarization. Y. Sampurno, F. Sudargho, Y. Zhuang, T. Ashizawa, H. Morishima and A. Philipossian. Electrochemical and Solid-State Letters, 12(6), H191-H194 (2009).
  44. Frictional Analysis of Various Poly(vinyl alcohol) Brush Roller Designs for Post-Interlevel Dielectric CMP Scrubbing Applications. A. Philipossian and T. Sun. Electrochemical and Solid-State Letters, 12(3), H84-H87 (2009).
  45. Characterization of Thermoset and Thermoplastic Polyurethane Pads and Molded and Machined Grooving Methods for Oxide CMP Applications. Y. Sampurno, L. Borucki, Y. Zhuang, S. Misra and A. Philipossian. Thin Solid Films, 517, 1719 (2009).
  46. Effect of Various Cleaning Solutions and Brush Scrubber Kinematics on the Frictional Attributes of Post Copper CMP Cleaning Process. Y. Sampurno, Y. Zhuang, X. Gu, S. Theng, T. Nemoto, T. Sun, F.Sudargho, A. Teramoto, A. Philipossian and T. Ohmi. Solid State Phenomena, 145-146, 363 (2009).
  47. Method for Determining the Lubrication Mechanism of Post-ILD CMP Brush Scrubbing. T. Sun and A. Philipossian. Electrochemical and Solid-State Letters, 11(8), H214-H217 (2008).
  48. Analysis of Pads with Slanted Grooves for Copper CMP. D. Rosales-Yeomans, D. DeNardis, L. Borucki, T. Suzuki, and A. Philipossian. Journal of The Electrochemical Society, 155(10) H750-H763 (2008).
  49. Design and Evaluation of Pad Grooves for Copper CMP. D. Rosales-Yeomans, D. DeNardis, L. Borucki and A. Philipossian. Journal of The Electrochemical Society, 155(10), H797-H806 (2008).
  50. Evaluation of Pad Groove Designs under Reduced Slurry Flow Rate Conditions during Copper CMP. D. Rosales-Yeomans, D. DeNardis, L. Borucki, T. Suzuki, Y. Sampurno and A. Philipossian. Journal of The Electrochemical Society, 155 (10) H812-H818 (2008).
  51. Feasibility of Real-time Detection of Abnormality in Inter Layer Dielectric Slurry During Chemical Mechanical Planarization using Frictional Analysis. Y. Sampurno, F. Sudargho, Y. Zhuang, M. Goldstein and A. Philipossian. Thin Solid Films, 516, 7667–7674 (2008).
  52. Experimental and Numerical Analysis of a Novel Ceria Based Abrasive Slurry for Interlayer Dielectric Chemical Mechanical Planarization. Y. Zhuang, L. Borucki, E. Dien, M. Ennahali, G. Michel, B. Laborie, M. Keswani, D. Rosales-Yeomans, H. Lee and A. Philipossian. Transactions on Electrical and Electronic Materials, 8(2), 53-57 (2007).
  53. Thermal, Tribological, and Removal Rate Characteristics of Pad Conditioning in Copper CMP. H. Lee, D. DeNardis, A. Philipossian, Y. Seike, M. Takaoka, K. Miyachi, S. Furukawa, A. Terada, Y. Zhuang and L. Borucki. Transactions on Electrical and Electronic Materials, 8(2), 67-72 (2007).
  54. Physics of the Coefficient of Friction in CMP. L. Borucki, A. Philipossian and Y. Zhuang. Transactions on Electrical and Electronic Materials, 8(2), 79-83 (2007).
  55. Study of Inhibition Characteristics of Slurry Additives in Copper CMP Using Force Spectroscopy. H. Lee, S. V. Babu, U. B. Patri, Y. Hong, L. Economikos, M. Goldstein and A. Philipossian. Transactions on Electrical and Electronic Materials, 8(1), 5-10 (2007).
  56. Diamond Conditioner Wear Characterization for a Copper CMP Process. L. Borucki, Y. Zhuang, A. Philipossian, R. Kikuma, R. Rikita, T. Yamashita, K. Nagasawa, H. Lee, T. Sun, D. Rosales-Yeomans and T. Stout. Transactions on Electrical and Electronic Materials, 8(1), 15-20 (2007).
  57. Development of a Pad Conditioning Method for ILD CMP using a High pressure Micro Jet System. H. Lee, D. DeNardis, A. Philipossian, Y. Seike, M. Takaoka, K. Miyachi and T. Doi. Transactions on Electrical and Electronic Materials, 8(1), 26-31 (2007).
  58. Characterization of Slurry Residues in Pad Grooves for Diamond Disc and High Pressure Micro Jet Pad Conditioning Processes. H. Lee, Y. Seike, Z. Li, Y. Zhuang, M. Takaoka, K. Miyachi and A. Philipossian. Japanese Journal of Applied Physics, 45(50), L1325-L1327 (2006).
  59. Characterization of Copper – Hydrogen Peroxide Film Growth Kinetics. D. DeNardis, D. Rosales-Yeomans, L. Borucki and A. Philipossian. Thin Solid Films, 513(1-2), 311-318 (2006).
  60. Effects of Design and Kinematics of Conditioners on Process Hydrodynamics during Copper CMP. Z. Li, H. Lee, L. Borucki, C. Rogers, R. Kikuma, S. Rikita, I. Nagasawa and A. Philipossian. Journal of The Electrochemical Society, 153(5), G399-G404 (2006).
  61. Implications of Wafer-Size Scale-up on Frictional, Thermal and Kinetic Attributes of ILD CMP Process. D. Rosales-Yeomans, L. Borucki, T. Doi, L. Lujan and A. Philipossian. Journal of The Electrochemical Society, 153(4), G272-G277 (2006).
  62. Effect of Slurry Injection Position on Slurry Mixing, Friction, Removal Rate and Temperature in Copper CMP. Y. Sampurno, L. Borucki and A. Philipossian. Journal of The Electrochemical Society, 152 (11), G841-G845 (2005).